Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
High linearity nanowire channel GaN HEMTs Proceeding/Conference:Device Research Conference - Conference Digest, DRC | 2013 | ||
Nanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf> Journal:IEEE Electron Device Letters | 2013 | ||
Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam Proceeding/Conference:2014 International Workshop on Junction Technology, IWJT 2014 | 2014 | ||
Vacancy clusters introduced by CF<inf>4</inf>-based plasma treatment in GaN probed with a monoenergetic positron beam Journal:Applied Physics Express | 2014 |