Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | |
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Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 | ||
MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2016 | ||
TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 |