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Showing results 1 to 8 of 8

	Title	Author(s)	Issue Date
	10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Porter, Matthew Ma, Yunwei Spencer, Joseph Du, Zhonghao Jacobs, Alan G.Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
	Activating Thick Buried p-GaN for Device Applications Journal:IEEE Transactions on Electron Devices	Ma, Yunwei Xiao, Ming Du, Zhonghao Wang, Lei Carlson, Eric Guido, Louis Wang, Han Wang, Lai Luo, Yi Zhang, Yuhao	2022
	First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, Ming Ma, Yunwei Du, Zhonghao Qin, Yuan Liu, Kai Cheng, Kai Udrea, Florin Xie, Andy Beam, Edward Wang, Boyan Spencer, Joseph Tadjer, Marko Anderson, Travis Wang, Han Zhang, Yuhao	2022
	(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV Proceeding/Conference:ECS Transactions	Zhang, Yuhao Xiao, Ming Ma, Yunwei Du, Zhonghao Wang, Han Xie, Andy Beam, Edward Cao, Yu Cheng, Kai	2021
	Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Ma, Yunwei Xiao, Ming Zhang, Yuhao Du, Zhonghao Yan, Xiaodong Wang, Han Cheng, Kai Clavel, Michael Hudait, Mantu K.Tao, Lei Lin, Feng Kravchenko, Ivan	2021
	Superjunction Power Transistors with Interface Charges: A Case Study for GaN Journal:IEEE Journal of the Electron Devices Society	Ma, Yunwei Xiao, Ming Zhang, Ruizhe Wang, Han Zhang, Yuhao	2020
	Tri-gate GaN junction HEMT Journal:Applied Physics Letters	Ma, Yunwei Xiao, Ming Du, Zhonghao Yan, Xiaodong Cheng, Kai Clavel, Michael Hudait, Mantu K.Kravchenko, Ivan Wang, Han Zhang, Yuhao	2020
	Tri-Gate GaN Junction HEMTs: Physics and Performance Space Journal:IEEE Transactions on Electron Devices	Ma, Yunwei Xiao, Ming Du, Zhonghao Wang, Han Zhang, Yuhao	2021

Showing results 1 to 8 of 8