Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | |
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A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration Journal:IEEE Electron Device Letters | 2011 | ||
Positive bias-induced V<inf>th</inf> instability in graphene field effect transistors Journal:IEEE Electron Device Letters | 2012 | ||
V<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection Journal:IEEE Transactions on Device and Materials Reliability | 2012 |