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Conference Paper: Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric

TitleEffects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric
Authors
Li, CXXu, HXXu, JPLai, PT
Issue Date2009
PublisherIEEE.
Citation
The IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 243-246 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2009.5394284
AbstractIn this work, Ge MOS capacitors with Y 2O 3 gate dielectric were fabricated. The effects of annealing in N 2, NH 3 O 2 or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y 2O 3 dielectric. On the other hand, the NH 3 annealing resulted in H-related traps while the O 2 annealing suffered from extra GeO x growth, thus both degrading the performance of the devices. ©2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/126176
ISBN
978-1-4244-4297-3
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, CXen_HK
dc.contributor.authorXu, HXen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-10-31T12:13:55Z-
dc.date.available2010-10-31T12:13:55Z-
dc.date.issued2009en_HK
dc.identifier.citationThe IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 243-246en_HK
dc.identifier.isbn978-1-4244-4297-3-
dc.identifier.urihttp://hdl.handle.net/10722/126176-
dc.description.abstractIn this work, Ge MOS capacitors with Y 2O 3 gate dielectric were fabricated. The effects of annealing in N 2, NH 3 O 2 or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y 2O 3 dielectric. On the other hand, the NH 3 annealing resulted in H-related traps while the O 2 annealing suffered from extra GeO x growth, thus both degrading the performance of the devices. ©2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.-
dc.relation.ispartof2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009en_HK
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleEffects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-1-4244-4297-3&volume=&spage=243&epage=246&date=2009&atitle=Effects+of+annealing+gas+species+on+the+electrical+properties+and+reliability+of+Ge+MOS+capacitors+with+high-k+Y2O3+gate+dielectric-
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2009.5394284en_HK
dc.identifier.scopuseid_2-s2.0-77949735211en_HK
dc.identifier.hkuros180692en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77949735211&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage243en_HK
dc.identifier.epage246en_HK
dc.description.otherThe IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 243-246-
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridXu, HX=25639287800en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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