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Article: Interconnected alternating-current light-emitting diode arrays isolated by laser micromachining

TitleInterconnected alternating-current light-emitting diode arrays isolated by laser micromachining
Authors
Mak, GYLam, EYChoi, HW
KeywordsAlternating current
Laser micro-machining
Lighting applications
Composite micromechanics
Electric rectifiers
Issue Date2011
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2011, v. 29 n. 1, article no. 011025, p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1116/1.3533949
AbstractThe fabrication and operation of a monolithic InGaN alternating-current light-emitting diode (LED) based on the bridge rectifier design are demonstrated. The device consists of on-chip interconnected LED elements that have been isolated by direct-write laser micromachining, a powerful tool well-suited for rapid device prototyping. The effects of capacitors coupled to the dc path of the rectifier have been investigated. Although an increase of radiant flux can be achieved through capacitive voltage smoothening, the wall-plug efficiency drops as a result. The device can be applied to 12 Vrms lighting applications. © 2011 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/135096
ISSN
1071-1023
2018 Impact Factor: 1.351
ISI Accession Number ID
WOS:000286679400028
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7118/09E).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorMak, GYen_HK
dc.contributor.authorLam, EYen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-07-27T01:28:18Z-
dc.date.available2011-07-27T01:28:18Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2011, v. 29 n. 1, article no. 011025, p. 1-4-
dc.identifier.issn1071-1023en_HK
dc.identifier.urihttp://hdl.handle.net/10722/135096-
dc.description.abstractThe fabrication and operation of a monolithic InGaN alternating-current light-emitting diode (LED) based on the bridge rectifier design are demonstrated. The device consists of on-chip interconnected LED elements that have been isolated by direct-write laser micromachining, a powerful tool well-suited for rapid device prototyping. The effects of capacitors coupled to the dc path of the rectifier have been investigated. Although an increase of radiant flux can be achieved through capacitive voltage smoothening, the wall-plug efficiency drops as a result. The device can be applied to 12 Vrms lighting applications. © 2011 American Vacuum Society.en_HK
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_HK
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_HK
dc.rightsCopyright 2011 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2011, v. 29 n. 1, article no. 011025, p. 1-4 and may be found at https://doi.org/10.1116/1.3533949-
dc.subjectAlternating current-
dc.subjectLaser micro-machining-
dc.subjectLighting applications-
dc.subjectComposite micromechanics-
dc.subjectElectric rectifiers-
dc.titleInterconnected alternating-current light-emitting diode arrays isolated by laser micromachiningen_HK
dc.typeArticleen_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1116/1.3533949en_HK
dc.identifier.scopuseid_2-s2.0-79551653095en_HK
dc.identifier.hkuros186763en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79551653095&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume29en_HK
dc.identifier.issue1en_HK
dc.identifier.spagearticle no. 011025, p. 1-
dc.identifier.epagearticle no. 011025, p. 4-
dc.identifier.isiWOS:000286679400028-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridMak, GY=8678365200en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.issnl1071-1023-

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