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Conference Paper: Enhanced mobility for pentacene TFT built on NH3-annealed thermally grown SiO2

TitleEnhanced mobility for pentacene TFT built on NH3-annealed thermally grown SiO2
Authors
Kwan, MCCheng, KKHLai, PTChe, CM
KeywordsComputers
Circuits
Issue Date2006
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 19-21 December 2005. In Conference Proceedings, 2005, p. 567-570 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2005.1635336
AbstractWe have enhanced the mobility of pentacene OTFTs using NH 3-annealed SiO2 as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N 2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45692
ISBN
0-7803-9339-2
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorKwan, MCen_HK
dc.contributor.authorCheng, KKHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2007-10-30T06:32:50Z-
dc.date.available2007-10-30T06:32:50Z-
dc.date.issued2006en_HK
dc.identifier.citationThe 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 19-21 December 2005. In Conference Proceedings, 2005, p. 567-570en_HK
dc.identifier.isbn0-7803-9339-2-
dc.identifier.urihttp://hdl.handle.net/10722/45692-
dc.description.abstractWe have enhanced the mobility of pentacene OTFTs using NH 3-annealed SiO2 as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N 2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%. © 2005 IEEE.en_HK
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dc.format.extent4079 bytes-
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dc.format.mimetypetext/plain-
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dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853en_HK
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits (EDSSC)en_HK
dc.rights©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectComputersen_HK
dc.subjectCircuitsen_HK
dc.titleEnhanced mobility for pentacene TFT built on NH3-annealed thermally grown SiO2en_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/EDSSC.2005.1635336en_HK
dc.identifier.scopuseid_2-s2.0-43549123569en_HK
dc.identifier.hkuros120783-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-43549123569&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage567en_HK
dc.identifier.epage570en_HK
dc.identifier.scopusauthoridKwan, MC=8301739500en_HK
dc.identifier.scopusauthoridCheng, KKH=51563504800en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.customcontrol.immutablesml 150924-

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