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Title	Author(s)	Issue Date	Views
Deep level defect study of As-implanted ZnO p-n junction Proceeding/Conference:Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications, E-MRS 2008 Spring Meeting, Strasbourg, France, May 26-30, 2008	Zhu, C Ling, FCC Brauer, G Anwand, W Skorupa, W	2008	129
Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation Proceeding/Conference:AIP Conference Proceedings	Ling, CC Chen, XD Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W Gong, M	2005	147
Deep level defects in 6H silicon carbide Journal:物理	Ling, CC Chen, XD Fung, SHY Beling, CD Gong, M Ge, WK Wang, JN Brauer, G Anwand, W Skorupa, W	2004	159
Deep level defects in 6H silicon carbide induced by particles irradiations Proceeding/Conference:The National Conference of Semiconductor Physics	Ling, FCC Chen, X Gong, M Ge, WK Wang, JN Yang, CL Brauer, G Anwand, W Skorupa, W Beling, CD Fung, SHY Wang, HY Weng, HM	2005	120
Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction Journal:Applied Physics Letters	Gu, QL Ling, CC Brauer, G Anwand, W Skorupa, W Hsu, YF Djurišić, AB Zhu, CY Fung, S Lu, LW	2008	207
Deep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopy Proceeding/Conference:Materials Research Society Symposium Proceedings	Chen, XD Ling, CC Fung, S Beling, CD Wu, HS Brauer, G Anwand, W Skorupa, W	2004	142
Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal Proceeding/Conference:International Symposium on Compound Semiconductors, ISCS 2010	Ding, G Ling, CC Anwand, W Brauer, G Skorupa, W	2010	129
Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal Journal:Semiconductor Science and Technology	Ye, ZR Lu, XH Ding, GW Fung, S Ling, CC Brauer, G Anwand, W	2011	77
Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC Journal:Applied Physics Letters	Gong, M Reddy, CV Beling, CD Fung, S Brauer, G Wirth, H Skorupa, W	1998	187
Deep-level defects in n-type 6H silicon carbide induced by He implantation Journal:Journal of Applied Physics	Ling, CC Chen, XD Brauer, G Anwand, W Skorupa, W Wang, HY Weng, HM	2005	226
Deep-level defects study of arsenic-implanted ZnO single crystal Journal:Microelectronics Journal	Zhu, CY Ling, CC Brauer, G Anwand, W Skorupa, W	2009	274
Defect study in zinc oxide related structures – Electrical and optical characterization Proceeding/Conference:Materials Research Society (MRS) International Materials Research Conference	Gu, Q Ling, FCC Cheung, CK Dai, X Xu, SJ Tam, KH Djurisic, A Wang, RS Ong, HC Brauer, G Anwand, W Skorupa, W	2008
Defect study in ZnO related structures-A multi-spectroscopic approach Journal:Applied Surface Science	Ling, CC Cheung, CK Gu, QL Dai, XM Xu, SJ Zhu, CY Luo, JM Zhu, CY Tam, KH Djurišić, AB Beling, CD Fung, S Lu, LW Brauer, G Anwand, W Skorupa, W Ong, HC	2008	172
Defects characterization in ZnO Schottky contact and homogeneous p-n junction Proceeding/Conference:IEEE Nanotechnology Materials and Devices Conference	Ling, FCC Gu, Q Zhu, C Hsu, YF Djurisic, A Brauer, G Anwand, W Skorupa, W	2008
Defects in zinc-implanted ZnO thin films Journal:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures	Schmidt, M Ellguth, M Czekalla, C V Wenckstern, H Pickenhain, R Grundmann, M Brauer, G Skorupa, W Helm, M Gu, Q Ling, CC	2009
Electrical characterization of N +-implanted n-type ZnO single crystals: p-n homojunction and deep level defects Proceeding/Conference:Materials Research Society Symposium Proceedings	Gu, Q Dai, X Ling, CC Xu, S Lu, L Brauer, G Anwand, W Skorupa, W	2008
Electrical characterization of N+-implanted n-type ZnO single crystal: ZnO p-n homojunction and deep level defects Proceeding/Conference:Materials Research Society (MRS) Fall Meeting & Exhibit	Gu, Q Dai, X Ling, FCC Xu, SJ Lu, L Brauer, G Anwand, W Skorupa, W	2007	123
Electrical characterizations of deep levels in N+-implanted ZnO single crystal Proceeding/Conference:International Conference on Materials for Advanced Technologies, ICMAT 2007	Gu, Q Ling, FCC Brauer, G Anwand, W Skorupa, W	2007
Electrical properties of ZnO nanorods studied by conductive atomic force microscopy Journal:Journal of Applied Physics	Beinik, I Kratzer, M Wachauer, A Wang, L Lechner, RT Teichert, C Motz, C Anwand, W Brauer, G Chen, XY Hsu, XY Djurišić, AB	2011	192
Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory Journal:Journal of Applied Physics	Dai, XM Xu, SJ Ling, CC Brauer, G Anwand, W Skorupa, W	2012	71

Showing results 11 to 30 of 52 < previous next >