Showing results 3 to 9 of 9
< previous
Title | Author(s) | Issue Date | |
---|---|---|---|
HfTiON as charge-trapping layer for nonvolatile memory applications Proceeding/Conference:ECS Meeting | 2012 | ||
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature Journal:Journal of Display Technology | 2016 | ||
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications Journal:IEEE Transactions on Device and Materials Reliability | 2011 | ||
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment Journal:IEEE Electron Device Letters | 2017 | ||
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications Journal:Microelectronics Reliability | 2016 | ||
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications Journal:IEEE Transactions on Device and Materials Reliability | 2012 | ||
A novel MONOS memory with high-κ HfLaON as charge-storage layer Journal:IEEE Transactions on Device and Materials Reliability | 2011 |