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Browsing by Author JI, F
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Showing results 8 to 23 of 23
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Title
Author(s)
Issue Date
Views
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
Journal:
Microelectronics Reliability
Ji, F
Xu, JP
Lai, PT
Guan, JG
2008
166
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, F
Xu, JP
Li, CX
Lai, PT
Chan, CL
2009
200
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:
Applied Physics Letters
Liu, L
Xu, J
Chen, JX
Ji, F
Lai, PT
2012
62
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Journal:
Applied Physics Letters
Xu, JP
Ji, F
Li, CX
Lai, PT
Guan, JG
Liu, YR
2007
127
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:
Applied Physics Letters
Ji, F
Xu, JP
Liu, JG
Li, CX
Lai, PT
2011
196
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:
IEEE Electron Device Letters
Ji, F
Xu, JP
Lai, PT
Li, CX
Liu, JG
2011
206
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:
Applied Physics Letters
Liu, L
Xu, J
Ji, F
Chen, JX
Lai, PT
2012
89
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceeding/Conference:
I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
Liu, L
Xu, J
Chen, JX
Ji, F
HUANG, X
Lai, PT
2012
57
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Ji, F
Xu, JP
Lai, PT
Li, CX
2007
218
Influence of natridation annealing of HfTiO on electrical properties of MOS device
Journal:
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Ji, F
Xu, J
Zhang, H
Lai, P
Li, C
Guan, J
2008
139
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric
Journal:
Microelectronics Reliability
Xu, JP
Ji, F
Lai, PT
Guan, JG
2008
211
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:
IEEE Transactions on Device and Materials Reliability
Liu, L
Xu, JP
Ji, F
Huang, XD
Lai, PT
2011
186
Resolving the genetic heterogeneity of prelingual hearing loss within one family: Performance comparison and application of two targeted next generation sequencing approaches.
Journal:
Journal of Human Genetics
Yu, L
Zhou, X
Jin, Z
Cheng, J
Shen, W
Ji, F
Liui, L
Zhang, X
Zhang, MQ
Cao, Y
Han, D
Choy, KW
Yuan, H
2014
80
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:
Chinese Physics
Ji, F
Xu, JP
Lai, PT
2007
119
Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal-oxide–nitride-oxide-silicon memory
Journal:
Thin Solid Films
Liu, L
Xu, J
Chen, JX
Ji, F
HUANG, X
Lai, PT
2012
63
Variational inference for cognitive diagnosis models
Proceeding/Conference:
The Annual Meeting of the National Council on Measurement in Education (NCME), Virtual Meeting, 2020
Ji, F
Deonovic, B
de la Torre, J
Maris, G
2020
42
