Showing results 11 to 14 of 14
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Title | Author(s) | Issue Date | |
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Positive bias-induced V<inf>th</inf> instability in graphene field effect transistors Journal:IEEE Electron Device Letters | 2012 | ||
Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2011 | ||
Temperature instability of resistive switching on HfO<inf>x</inf>-based RRAM devices Journal:IEEE Electron Device Letters | 2010 | ||
V<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection Journal:IEEE Transactions on Device and Materials Reliability | 2012 |