Showing results 1 to 7 of 7
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS<inf>2</inf> Channel Directly Grown on SiO<inf>x</inf>/Si Substrates Using Area-Selective CVD Technology Journal:IEEE Transactions on Electron Devices | 2019 | 7 | ||
First demonstration of 40-nm channel length top-gate WS<inf>2</inf> pFET using channel area-selective CVD growth directly on SiO<inf>x</inf>/Si substrate Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2019 | 13 | ||
High-Current Gain Two-Dimensional MoS<inf>2</inf>-Base Hot-Electron Transistors Journal:Nano Letters | 2015 | 5 | ||
| 2018 | 4 | |||
| 2015 | 11 | |||
| 2014 | 6 | |||
| 2014 | 10 |