Showing results 9 to 16 of 16
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Title | Author(s) | Issue Date | |
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Modeling the post-breakdown I-V characteristics of ultrathin SiO 2 films with multiple snapbacks Journal:Japanese Journal of Applied Physics, Part 2: Letters | 2001 | ||
On the switching behaviour of post-breakdown conduction in ultra-thin SiO 2 films Journal:Semiconductor Science and Technology | 2001 | ||
Post-breakdown conduction instability of ultrathin SiO 2 films observed in ramped-current and ramped-voltage current-voltage measurements Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002 | ||
Profile of optical constants of SiO 2 thin films containing Si nanocrystals Journal:Journal of Applied Physics | 2004 | ||
2005 | |||
1994 | |||
Snapback behaviour and its similarity to the switching behaviour in ultra-thin silicon dioxide films after hard breakdown Journal:Journal of Physics D: Applied Physics | 2001 | ||
Static dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film Journal:Applied Physics Letters | 2006 |