Browsing by Author Chan, CL

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TitleAuthor(s)Issue DateViews
 
Analysis of 5-methoxytryptamine at the femtomole level in the rat and quail brain by gas chromatography-electron-capture negative-ion chemical ionization mass spectrometry
Journal:Journal of Chromatography B, Biomedical sciences and applications
Tsang, CWChan, CLLi, PPang, SF
1996
102
 
Antimicrobial Resistance E.coli Recovered from Aero- and Hydro- Environments
Proceeding/Conference:Regional Symposium on Antimicrobial Resistance (AMR): Fighting AMR - Partnerships in Action, Hong Kong
Poonsuk, KOn, HChan, CLTun, HM
2018
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:Applied Physics A: Materials Science and Processing
Xu, JPZhang, XFLi, CXChan, CLLai, PT
2010
88
 
Computational Studies on the Photophysical Properties of Copper(I) Alkynyl Open Cubes [Cu4(PR3)4(m3-h1, h1, h2-CbaCR')3]PF6
Proceeding/Conference:National Meeting of the American Chemical Society
Lam, SWHChan, CLCheung, KLCheng, CCZhu, NChoi, SWKYam, VWW
2008
96
 
Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC
Journal:Applied Physics A: Materials Science and Processing
Xu, JPLai, PTWu, HPChan, CL
2005
71
 
Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system
Journal:Applied Physics Letters
Lai, PTChakraborty, SChan, CLCheng, YC
2000
85
 
Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
Journal:Microelectronics Reliability
Li, CXZou, XLai, PTXu, JPChan, CL
2008
75
 
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:IEEE Electron Device Letters
Lai, PTXu, JPChan, CL
2002
148
 
Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Journal:Chinese Physics
Chen, WBXu, JPLai, PTLi, YPXu, SGChan, CL
2006
 
Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Journal:Chinese Physics
Xu, JPChen, WBLai, PTLi, YPChan, CL
2007
63
 
Electroacupuncture for tapering off long-term benzodiazepine use: study protocol of randomized controlled trial
Journal:BMC Complementary and Alternative Medicine
Yeung, WFChung, KFZhang, ZChan, WCZhang, SPNg, RMChan, CLHo, LMYu, YMLao, L
2017
38
 
Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation
Journal:Sensors and Actuators, A: Physical
Tang, WMLai, PTXu, JPChan, CL
2005
103
 
Enhancing antioxidant capacity of Lactobacillus acidophilus-fermented milk fortified with pomegranate peel extracts
Journal:Food Bioscience
GAN, RChan, CLShah, NCorke, H
2018
30
 
Fabrication and electrical characterization of MONOS memory with novel high-κ gate stack
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Liu, LXu, JPChan, CLLai, PT
2009
81
 
Gut Microbiota Analysis Suggests The Target Bacteria for Antimicrobial Resistance (AMR) Monitoring in Exotic Pet, Red – Ear Terrapin (Trachemys scripta elegans)
Proceeding/Conference:The 19th International Symposium of the World Association of Veterinary Laboratory Diagnosticians 2019 & OIE Seminar
Poonsuk, KOn, HChan, CLLiang, STun, HM
2019
 
Hot Air Drying Induces Browning and Enhances Phenolic Content and Antioxidant Capacity in Mung Bean (Vigna radiata L.) Sprouts
Journal:Journal of Food Processing and Preservation
Gan, RLui, WYChan, CLCorke, H
2017
90
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPLi, CXLai, PTChan, CL
2009
196
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:Applied Physics A: Materials Science and Processing
Xu, HXXu, JPLi, CXChan, CLLai, PT
2010
89
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Journal:Applied Physics Letters
Zhang, XFXu, JPLi, CXLai, PTChan, CLGuan, JG
2008
96
 
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Journal:IEEE Electron Device Letters
Xu, JPZhang, XFLi, CXLai, PTChan, CL
2008
86
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