Showing results 1 to 9 of 9
| Title | Author(s) | Issue Date | |
|---|---|---|---|
1200 V GaN vertical fin power field-effect transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2018 | ||
Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 | ||
Cultural Exclusion in China: State education, Social Mobility, and Cultural Differences Journal:London and New York: Routledge press (2008) & Reviewed for China Information (2009) | 2008 | ||
Enhancement-mode single-layer CVD MoS2 FET technology for digital electronics Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2015 | ||
High-yield large area MoS<inf>2</inf> technology: Material, device and circuits co-optimization Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2017 | ||
Integrating brain imaging features and genomic profiles for the subtyping of major depression Journal:Psychological Medicine | 22-May-2025 | ||
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2017 | ||
Regulation of PTEN transcription by p53 Journal:Molecular Cell | 2001 | ||
Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 |
