Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration Journal:IEEE Electron Device Letters | 2011 | ||
A self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode Journal:IEEE Electron Device Letters | 2012 | ||
High performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application Proceeding/Conference:2011 Symposium on VLSI Technology - Digest of Technical Papers | 2011 | ||
Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2011 |