Showing results 1 to 5 of 5
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Comprehensive Physics Based TCAD Model for 2D MX<inf>2</inf>Channel Transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | |||
First Demonstration of GAA Monolayer-MoS<inf>2</inf>Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | |||
Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | |||
Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2022 | |||
pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 |