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	Title	Author(s)	Issue Date
	Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Porter, Matthew A.Ma, YunweiQin, YuanSrijanto, BernadetaBriggs, DayrlKravchenko, IvanZhang, Yuhao	2024
	Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Wang, BixuanSong, QihaoMukherjee, KalparupaEfthymiou, LoizosPopa, DanielLongobardi, GiorgiaUdrea, FlorinZhang, Yuhao	2024
	Unclamped-inductive-switching Based Output Capacitance Loss Characterization with Extended Test Capability Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Song, QihaoLi, QiangZhang, Yuhao	2024
	Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications Proceeding/Conference:2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020	Teo, Koon HooChowdhury, NadimZhang, YuhaoPalacios, TomasYamanaka, KojiYamaguchi, Yutaro	2020
	Dynamic breakdown voltage of GaN Power HEMTs Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Zhang, R.Kozak, J. P.Song, Q.Xiao, M.Liu, J.Zhang, Y.	2020
	2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, YuanPorter, MatthewXiao, MingDu, ZhonghaoZhang, HongmingMa, YunweiSpencer, JosephWang, BoyanSong, QihaoSasaki, KoheiLin, Chia HungKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Tadjer, MarkoWang, HanZhang, Yuhao	2023
	1.1 A/mm ß-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF MOSFETs with 2.3 W/mm P<inf>out</inf> and 30% PAE at 2 GHz and f<inf>T</inf>/f<inf>max</inf> of 27.6/57 GHz Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Zhou, MinZhou, HongHuang, SenSi, MengweiZhang, YuhaoLuan, TiantianYue, HongqingDang, KuiWang, ChenluLiu, ZhihongZhang, JinchengHao, Yue	2023
	Output Capacitance Loss in Wide-bandgap and Superjunction Power Transistors: Impact of Switching Voltage and Current Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Song, QihaoLi, QiangZhang, Yuhao	2023
	P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Porter, Matthew A.Ma, YunweiQin, YuanZhang, Yuhao	2023
	Planar Implantation Edge Termination for Vertical GaN Power Devices Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Wang, YifanXiao, MingPorter, MatthewZhang, RuizheSong, QihaoLu, AlbertYee, NathanWong, Hiu YungZhang, Yuhao	2023
	Gate Lifetime of P-Gate GaN HEMT under DC and Switching Overvoltage Stress Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Wang, BixuanZhang, RuizheSong, QihaoLi, QiangZhang, Yuhao	2023
	Demonstrating the ICeGaN integrated power HEMT approach towards extreme gate robustness Proceeding/Conference:Proceedings of the International Semiconductor Conference, CAS	Mukherjee, K.Efthymiou, L.Ledins, K.Popa, D.Wang, B.Song, Q.Zhang, Y.Longobardi, G.Udrea, F.	2023
	Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Wang, BixuanZhang, RuizheWang, HengyuHe, QuanboSong, QihaoLi, QiangUdrea, FlorinZhang, Yuhao	2023
	Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V<inf>F</inf>Q)<sup>-1</sup>Co-Optimization Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Yee, NathanLu, AlbertWang, YifanPorter, MatthewZhang, YuhaoWong, Hiu Yung	2023
	Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Wang, BixuanSong, QihaoZhang, RuizheSun, YiKong, PengjuLi, QiangZhang, Yuhao	2023
	Switching Performance Evaluation of 650 v Vertical GaN Fin JFET Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Zhang, R.Yang, Q.Li, Q.Zhang, Y.Padilla, V.Pastore, T.Meier, W.Pidaparthi, S.Drowley, C.	2023
	Investigation on Physical Origins of Output Capacitance Loss in Cascode GaN HEMTs Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Song, QihaoZhang, RuizheLi, QiangZhang, Yuhao	2023
	GaN HEMTs in High-Frequency Overvoltage Switching: Electrical or Thermal Failure? Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Zhang, RuizheSong, QihaoLi, QiangZhang, Yuhao	2023
	A Converter Based Switching Loss Measurement Method for WBG Device Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC	Yang, QiuzheNabih, AhmedZhang, RuizheLi, QiangZhang, Yuhao	2023
	A Simple and Accurate Method to Characterize Output Capacitance Losses of GaN HEMTs Proceeding/Conference:2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022	Song, QihaoZhang, RuizheLi, QiangZhang, Yuhao	2022