Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author Sin, JKO
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 1 to 20 of 30
next >
Title
Author(s)
Issue Date
Views
Adaptive High-Bandwidth Digitally Controlled Buck Converter with Improved Line and Load Transient Response
Journal:
IET Power Electronics
Lee, ATL
Sin, JKO
Chan, PCH
2014
BaTiO3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
Solid State Electronics
HUANG, X
Sin, JKO
Lai, PT
2013
46
Charge-Trapping Characteristics of Ga2O3 Nanocrystals for Nonvolatile Memory Applications
Journal:
ECS Solid State Letters
HUANG, X
Lai, PT
Sin, JKO
2012
51
Cost-effective and eco-friendly LED System-on-a-Chip
Proceeding/Conference:
CHINASSL 2013
Lau, KM
Choi, HW
Ki, WH
Lee, RSW
Mok, PKT
Sin, JKO
Yue, CP
2013
91
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Journal:
Microelectronics Reliability
Or, DCT
Lai, PT
Sin, JKO
Kwok, PCK
Xu, JP
2003
187
A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
Proceeding/Conference:
I E E E International Conference on Semiconductor Electronics Proceedings
Jun, C
Sin, JKO
Poon, MC
Ng, WT
Lai, PT
1996
54
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Electron Devices
Huang, XD
Sin, JKO
Lai, PT
2011
171
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Nanotechnology
Huang, X
Sin, JKO
Lai, PT
2013
58
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Journal:
Solid-State Electronics
Li, B
Wu, ZH
Lai, PT
Sin, JKO
Liu, BY
Zheng, XR
2003
187
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
Journal:
IEEE Electron Device Letters
Huang, X
Sin, JKO
Lai, PT
2013
27
Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Device and Materials Reliability
HUANG, X
SHI, R
Sin, JKO
Lai, PT
2016
45
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Journal:
Solid-State Electronics
Or, DCT
Lai, PT
Sin, JKO
Xu, JP
2003
149
Latch-up characteristics of a trench-gate conductivity modulated power transistor
Proceeding/Conference:
IEEE Region International Conference on Microelectronics and VLSI Proceedings
Jun, C
Sin, JKO
Ng, WT
Lai, PT
1995
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics A: Materials Science and Processing
Huang, XD
Lai, PT
Sin, JKO
2012
229
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
Microelectronics Reliability
SHI, R
Huang, XD
Sin, JKO
Lai, PT
2016
62
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics Letters
SHI, R
HUANG, X
Sin, JKO
Lai, PT
2015
50
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Device and Materials Reliability
Shi, RP
Huang, XD
Leung, CH
Sin, JKO
Lai, PT
2015
35
A new high-temperature thermal sensor based on large-grain polysilicon on insulator
Journal:
Sensors and Actuators, A: Physical
Wu, ZH
Lai, PT
Sin, JKO
2006
211
A new lateral trench-gate conductivity modulated power transistor
Journal:
IEEE Transactions on Electron Devices
Cai, J
Sin, JKO
Mok, PKT
Ng, WT
Lai, PT
1999
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Huang, XD
Sin, JKO
Lai, PT
2012
135