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Showing results 2 to 21 of 23 < previous next >

Title	Author(s)	Issue Date	Views
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	JI, F XU, JP LIU, L TANG, WM Lai, PT	2016	28
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Ji, F Xu, JP Chen, JJ Xu, HX Li, CX Lai, PT	2009	196
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Liu, L Xu, JP Huang, XD Ji, F Lai, PT	2010	151
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Zou, X Xu, JP Lai, PT Li, Y Ji, F Deng, LF	2010	137
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Ji, F Xu, JP Li, CX Lai, PT Deng, LF Zou, X	2010	122
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Journal:Applied Physics Letters	Ji, F Xu, JP Lai, PT Li, CX Guan, JG	2007	196
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	Ji, F Xu, JP Lai, PT Guan, JG	2008	166
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Ji, F Xu, JP Li, CX Lai, PT Chan, CL	2009	200
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure Journal:Applied Physics Letters	Liu, L Xu, J Chen, JX Ji, F Lai, PT	2012	62
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters	Xu, JP Ji, F Li, CX Lai, PT Guan, JG Liu, YR	2007	127
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011	196
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011	205
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications Journal:Applied Physics Letters	Liu, L Xu, J Ji, F Chen, JX Lai, PT	2012	89
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings	Liu, L Xu, J Chen, JX Ji, F HUANG, X Lai, PT	2012	57
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Ji, F Xu, JP Lai, PT Li, CX	2007	218
Influence of natridation annealing of HfTiO on electrical properties of MOS device Journal:Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics	Ji, F Xu, J Zhang, H Lai, P Li, C Guan, J	2008	139
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	Xu, JP Ji, F Lai, PT Guan, JG	2008	211
A novel MONOS memory with high-κ HfLaON as charge-storage layer Journal:IEEE Transactions on Device and Materials Reliability	Liu, L Xu, JP Ji, F Huang, XD Lai, PT	2011	186
Resolving the genetic heterogeneity of prelingual hearing loss within one family: Performance comparison and application of two targeted next generation sequencing approaches. Journal:Journal of Human Genetics	Yu, L Zhou, X Jin, Z Cheng, J Shen, W Ji, F Liui, L Zhang, X Zhang, MQ Cao, Y Han, D Choy, KW Yuan, H	2014	80
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect Journal:Chinese Physics	Ji, F Xu, JP Lai, PT	2007	119

Showing results 2 to 21 of 23 < previous next >