Browsing by Author Ji, F

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TitleAuthor(s)Issue DateViews
 
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
JI, FXU, JPLIU, LTANG, WMLai, PT
2016
28
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPChen, JJXu, HXLi, CXLai, PT
2009
188
 
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Liu, LXu, JPHuang, XDJi, FLai, PT
2010
147
 
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Zou, XXu, JPLai, PTLi, YJi, FDeng, LF
2010
133
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, FXu, JPLi, CXLai, PTDeng, LFZou, X
2010
118
 
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Journal:Applied Physics Letters
Ji, FXu, JPLai, PTLi, CXGuan, JG
2007
189
 
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
Ji, FXu, JPLai, PTGuan, JG
2008
159
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Ji, FXu, JPLi, CXLai, PTChan, CL
2009
193
 
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:Applied Physics Letters
Liu, LXu, JChen, JXJi, FLai, PT
2012
61
 
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Journal:Applied Physics Letters
Xu, JPJi, FLi, CXLai, PTGuan, JGLiu, YR
2007
121
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:Applied Physics Letters
Ji, FXu, JPLiu, JGLi, CXLai, PT
2011
189
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:IEEE Electron Device Letters
Ji, FXu, JPLai, PTLi, CXLiu, JG
2011
198
 
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:Applied Physics Letters
Liu, LXu, JJi, FChen, JXLai, PT
2012
87
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
Liu, LXu, JChen, JXJi, FHUANG, XLai, PT
2012
57
 
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Ji, FXu, JPLai, PTLi, CX
2007
211
 
Influence of natridation annealing of HfTiO on electrical properties of MOS device
Journal:Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Ji, FXu, JZhang, HLai, PLi, CGuan, J
2008
134
 
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
Xu, JPJi, FLai, PTGuan, JG
2008
203
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:IEEE Transactions on Device and Materials Reliability
Liu, LXu, JPJi, FHuang, XDLai, PT
2011
178
 
Resolving the genetic heterogeneity of prelingual hearing loss within one family: Performance comparison and application of two targeted next generation sequencing approaches.
Journal:Journal of Human Genetics
Yu, LZhou, XJin, ZCheng, JShen, WJi, FLiui, LZhang, XZhang, MQCao, YHan, DChoy, KWYuan, H
2014
80
 
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:Chinese Physics
Ji, FXu, JPLai, PT
2007
115
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