Browsing by Author CHAN, CL

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TitleAuthor(s)Issue DateViews
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
 
2010
 
2008
237
 
2008
207
 
2006
216
 
2009
217
 
2003
192
 
2000
173
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
2005
 
2000
195
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1999
119
 
2001
174
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
 
2004
207
 
2005
 
2006
 
2021
14
 
2022
6
 
2004
81
 
2001
166