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Title	Author(s)	Issue Date	Views
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1995	160
Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES Lo, HB	1997	99
CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES	1996	140
Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors Journal:Applied Physics Letters	Yan, BP Hsu, CC Wang, XQ Yang, ES	2004
Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Ou, HJ Huang, TC Yang, ES	1997	205
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management Journal:IEEE Transactions on Electron Devices	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2003	138
High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1996	100
High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage Journal:Electronics Letters	Ou, HJ Hsu, CC Yang, YF Yang, ES	1997	103
A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES Ou, HJ	1996	188
InGaP/GaAs power heterostructure-emitter bipolar transistor Journal:Electronics Letters	Yan, BP Yang, ES Yang, YF Wang, XQ Hsu, CC	2001	165
InGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistor Journal:Electronics Letters	Yan, BP Hsu, CC Wang, XQ Yang, ES	2002	163
InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain Proceeding/Conference:Conference Proceedings - International Conference on Indium Phosphide and Related Materials	Yan, BP Hsu, CC Wang, XQ Bai, YK Yang, ES	2002	190
Integration of GaInP/GaAs heterojunction bipolar transistors and high electron mobility transistors Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES	1996
Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD Journal:IEEE Electron Device Letters	Yan, BP Hsu, CC Wang, XQ Yang, ES	2002
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Hsu, CC Lo, HB Yang, YF	2000	174
Novel InGaP/GaAsSb/GaAs DHBTs	Cheung, CC Yan, BP Hsu, CC Yang, ES	2003	109
Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors Journal:Semiconductor Science and Technology	Yang, YF Hsu, CC Yang, ES	1995
Pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP HEMT grown by MOVPE using TBP and TBA Journal:Electronics Letters	Yang, YF Hsu, CC Yang, ES	1994	186
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge Journal:Microelectronics Reliability	Van, BP Yang, YF Hsu, CC Lo, HB Yang, ES	2001	155
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Yang, ES	1994	161

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