Browsing by Author Huang, XD

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TitleAuthor(s)Issue DateViews
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2011
103
 
2018
33
 
2015
63
 
2018
40
 
2011
163
 
2012
1279
 
2016
42
 
2015
62
 
2011
163
 
2014
48
 
2016
32
 
2011
180
 
2017
32
 
2014
12
 
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics A: Materials Science and Processing
2012
1434
 
2021
35
 
2016
59
 
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
2015
42
 
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Device and Materials Reliability
2012
129
 
2011
195