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Browsing by Author XU, JP
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Showing results 45 to 58 of 58
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Title
Author(s)
Issue Date
Views
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3
Proceeding/Conference:
ECS Transactions
Deng, LF
Lai, PT
Xu, JP
Choi, HW
Chen, WB
Che, CM
2010
115
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2017
13
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Chen, JX
Xu, JP
Liu, L
HUANG, XD
Lai, PT
Xu, HX
2014
25
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation
Proceeding/Conference:
IOP Conference Series: Materials Science and Engineering
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2017
27
Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
Journal:
Applied Physics Letters
Wang, LS
Xu, JP
Liu, L
Lu, HH
Lai, PT
Tang, WM
2015
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Journal:
Applied Surface Science
LIU, L
CHENG, ZX
XU, JP
HUANG, Y
Lai, PT
TANG, WM
2019
32
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
49
Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation
Journal:
Applied Physics Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2015
45
Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Journal:
Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics
Liu, L
Choi, HW
Lai, PT
Xu, JP
2015
62
A simplified post-soft-breakdown current model for MOS devices
Journal:
Applied Physics A: Materials Science and Processing
Li, ZL
Xu, JP
Lai, PT
2009
136
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PT
Li, CX
Xu, JP
Zou, X
Chan, CL
2005
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications
Journal:
IEEE Transactions on Electron Devices
LIU, L
TANG, WM
HUANG, X
XU, JP
Lai, PT
2019
12
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:
Chinese Physics
Ji, F
Xu, JP
Lai, PT
2007
110
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X
Li, CX
Xu, JP
Lai, PT
Chen, WB
2006
121