Browsing by Author XU, JP

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Showing results 50 to 58 of 58 < previous 
TitleAuthor(s)Issue DateViews
 
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Journal:Applied Surface Science
LIU, LCHENG, ZXXU, JPHUANG, YLai, PTTANG, WM
2019
32
 
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:IEEE Transactions on Electron Devices
Huang, YXu, JPLiu, LLai, PTTang, WM
2016
49
 
Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation
Journal:Applied Physics Letters
LIU, LChoi, HWXu, JPLai, PT
2015
45
 
Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Journal:Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics
Liu, LChoi, HWLai, PTXu, JP
2015
62
 
A simplified post-soft-breakdown current model for MOS devices
Journal:Applied Physics A: Materials Science and Processing
Li, ZLXu, JPLai, PT
2009
136
 
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PTLi, CXXu, JPZou, XChan, CL
2005
 
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications
Journal:IEEE Transactions on Electron Devices
LIU, LTANG, WMHUANG, XXU, JPLai, PT
2019
12
 
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:Chinese Physics
Ji, FXu, JPLai, PT
2007
110
 
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, XLi, CXXu, JPLai, PTChen, WB
2006
121
Showing results 50 to 58 of 58 < previous