Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author Xu, JP
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 50 to 58 of 58
< previous
Title
Author(s)
Issue Date
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Journal:
Applied Surface Science
LIU, L
CHENG, ZX
XU, JP
HUANG, Y
Lai, PT
TANG, WM
2019
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation
Journal:
Applied Physics Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2015
Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Journal:
Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics
Liu, L
Choi, HW
Lai, PT
Xu, JP
2015
A simplified post-soft-breakdown current model for MOS devices
Journal:
Applied Physics A: Materials Science and Processing
Li, ZL
Xu, JP
Lai, PT
2009
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PT
Li, CX
Xu, JP
Zou, X
Chan, CL
2005
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications
Journal:
IEEE Transactions on Electron Devices
LIU, L
TANG, WM
HUANG, X
XU, JP
Lai, PT
2019
A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect
Journal:
Chinese Physics
Ji, F
Xu, JP
Lai, PT
2007
Threshold voltage model of SiGe channel pMOSFET without Si cap layer
Proceeding/Conference:
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Zou, X
Li, CX
Xu, JP
Lai, PT
Chen, WB
2006