Showing results 1 to 5 of 5
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Deep energy levels in RuO2/4H–SiC Schottky barrier structures Journal:Applied Physics Letters | 2006 | 198 | ||
Pinning-Free Edge Contact Monolayer MoS2 FET Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | 29 | ||
Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | 25 | ||
Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | 21 | ||
| 2019 | 26 |