Browsing by Author Hobart, Karl D.

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Showing results 1 to 5 of 5
TitleAuthor(s)Issue Date
 
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga<inf>2</inf>O<inf>3</inf>:N with high mobility
Journal:Applied Physics Letters
Spencer, Joseph A.Tadjer, Marko J.Jacobs, Alan G.Mastro, Michael A.Lyons, John L.Freitas, Jaime A.Gallagher, James C.Thieu, Quang T.Sasaki, KoheiKuramata, AkitoZhang, YuhaoAnderson, Travis J.Hobart, Karl D.
2022
 
PtO<inf>x</inf> Schottky Contacts on Degenerately Doped 2¯01β-Ga<inf>2</inf>O<inf>3</inf> Substrates
Journal:Journal of Electronic Materials
Spencer, Joseph A.Jacobs, Alan G.Hobart, Karl D.Koehler, Andrew D.Anderson, Travis J.Zhang, YuhaoTadjer, Marko J.
2024
 
Silicon Ion Implant Activation in β-(Al<inf>0.2</inf>Ga<inf>0.8</inf>)<inf>2</inf>O<inf>3</inf>
Journal:Journal of Electronic Materials
Jacobs, Alan G.Spencer, Joseph A.Tadjer, Marko J.Feigelson, Boris N.Lamb, AbbeyLee, Ming HsunPeterson, Rebecca L.Alema, FikaduOsinsky, AndreiZhang, YuhaoHobart, Karl D.Anderson, Travis J.
2024
 
Suppression of Enhanced Magnesium Diffusion During High-Pressure Annealing of Implanted GaN
Journal:Physica Status Solidi (A) Applications and Materials Science
Jacobs, Alan G.Feigelson, Boris N.Lundh, James S.Spencer, Joseph A.Freitas, Jaime A.Gunning, Brendan P.Kaplar, Robert J.Zhang, YuhaoTadjer, Marko J.Hobart, Karl D.Anderson, Travis J.
2024
 
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Journal:IEEE Electron Device Letters
Zhang, YuhaoLiu, ZhihongTadjer, Marko J.Sun, MinPiedra, DanielHatem, ChristopherAnderson, Travis J.Luna, Lunet E.Nath, AnindyaKoehler, Andrew D.Okumura, HironoriHu, JieZhang, XuGao, XiangFeigelson, Boris N.Hobart, Karl D.Palacios, Tómas
2017
Showing results 1 to 5 of 5