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Browsing by Author XU, JP
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Showing results 37 to 56 of 58
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Title
Author(s)
Issue Date
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:
Applied Physics Letters
HUANG, Y
XU, JP
LIU, L
CHENG, ZX
Lai, PT
TANG, WM
2017
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:
Applied Physics Letters
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:
IEEE Electron Device Letters
Zhao, XY
Xu, JP
Liu, L
Lai, PT
Tang, WM
2020
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:
IEEE Electron Device Letters
Ji, F
Xu, JP
Lai, PT
Li, CX
Liu, JG
2011
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:
Applied Physics A: Materials Science and Processing
Lai, PT
Xu, JP
Li, CX
Chan, CL
2005
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:
Microelectronics Reliability
Lu, HH
Xu, JP
Liu, L
Wang, LS
Lai, PT
Tang, WM
2016
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric
Proceeding/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Deng, LF
Lai, PT
Tao, QB
Choi, HW
Xu, JP
Chen, WB
Che, CM
Liu, YR
2010
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3
Proceeding/Conference:
ECS Transactions
Deng, LF
Lai, PT
Xu, JP
Choi, HW
Chen, WB
Che, CM
2010
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2017
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Chen, JX
Xu, JP
Liu, L
HUANG, XD
Lai, PT
Xu, HX
2014
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation
Proceeding/Conference:
IOP Conference Series: Materials Science and Engineering
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2017
Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
Journal:
Applied Physics Letters
Wang, LS
Xu, JP
Liu, L
Lu, HH
Lai, PT
Tang, WM
2015
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Journal:
Applied Surface Science
LIU, L
CHENG, ZX
XU, JP
HUANG, Y
Lai, PT
TANG, WM
2019
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation
Journal:
Applied Physics Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2015
Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
Journal:
Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics
Liu, L
Choi, HW
Lai, PT
Xu, JP
2015
A simplified post-soft-breakdown current model for MOS devices
Journal:
Applied Physics A: Materials Science and Processing
Li, ZL
Xu, JP
Lai, PT
2009
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
Lai, PT
Li, CX
Xu, JP
Zou, X
Chan, CL
2005
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications
Journal:
IEEE Transactions on Electron Devices
LIU, L
TANG, WM
HUANG, X
XU, JP
Lai, PT
2019