HKU Scholars Hub: Browsing DSpace

Browsing by Author XU, JP

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中

or enter first few letters:

Showing results 37 to 56 of 58 < previous next >

Title	Author(s)	Issue Date
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer Journal:Applied Physics Letters	HUANG, Y XU, JP LIU, L CHENG, ZX Lai, PT TANG, WM	2017
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation Journal:Applied Physics Letters	Huang, Y Xu, JP Liu, L Lai, PT Tang, WM	2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment Journal:Applied Surface Science	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2019
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric Journal:IEEE Electron Device Letters	Zhao, XY Xu, JP Liu, L Lai, PT Tang, WM	2020
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO Journal:Applied Physics A: Materials Science and Processing	Lai, PT Xu, JP Li, CX Chan, CL	2005
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer Journal:Microelectronics Reliability	Lu, HH Xu, JP Liu, L Wang, LS Lai, PT Tang, WM	2016
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Deng, LF Lai, PT Tao, QB Choi, HW Xu, JP Chen, WB Che, CM Liu, YR	2010
Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3 Proceeding/Conference:ECS Transactions	Deng, LF Lai, PT Xu, JP Choi, HW Chen, WB Che, CM	2010
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation Journal:IEEE Transactions on Electron Devices	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2017
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer Journal:IEEE Transactions on Device and Materials Reliability	Chen, JX Xu, JP Liu, L HUANG, XD Lai, PT Xu, HX	2014
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation Proceeding/Conference:IOP Conference Series: Materials Science and Engineering	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2017
Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric Journal:Applied Physics Letters	Wang, LS Xu, JP Liu, L Lu, HH Lai, PT Tang, WM	2015
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices Journal:Applied Surface Science	LIU, L CHENG, ZX XU, JP HUANG, Y Lai, PT TANG, WM	2019
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric Journal:IEEE Transactions on Electron Devices	Huang, Y Xu, JP Liu, L Lai, PT Tang, WM	2016
Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation Journal:Applied Physics Letters	LIU, L Choi, HW Xu, JP Lai, PT	2015
Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation Journal:Journal of Vacuum Science and Technology: Part B Nanotechnology & Microelectronics	Liu, L Choi, HW Lai, PT Xu, JP	2015
A simplified post-soft-breakdown current model for MOS devices Journal:Applied Physics A: Materials Science and Processing	Li, ZL Xu, JP Lai, PT	2009
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings	Lai, PT Li, CX Xu, JP Zou, X Chan, CL	2005
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications Journal:IEEE Transactions on Electron Devices	LIU, L TANG, WM HUANG, X XU, JP Lai, PT	2019

Showing results 37 to 56 of 58 < previous next >