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Showing results 35 to 54 of 87 < previous next >

Title	Author(s)	Issue Date	Views
Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces Journal:Journal of Applied Physics	Chen, TP Liu, YC Fung, S Beling, CD	1995	61
Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure Journal:Journal of Applied Physics	Liu, Y Chen, TP Ding, L Yang, M Wong, JI Ng, CY Yu, SF Li, ZX Yuen, C Zhu, FR Tan, MC Fung, S	2007	69
Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films Journal:Applied Physics A: Materials Science and Processing	Cen, ZH Chen, TP Ding, L Liu, Z Wong, JI Yang, M Goh, WP Fung, S	2011	64
Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors Journal:Applied Physics Letters	Chen, TP Huang, JY Tse, MS Tan, SS Ang, CH Fung, S	2003	82
Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O2 synthesized by Si ion implantation Journal:Journal of Applied Physics	Ding, L Chen, TP Liu, Y Yang, M Wong, JI Liu, YC Trigg, AD Zhu, FR Tan, MC Fung, S	2007	94
Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface Journal:Journal of Applied Physics	Ng, CY Chen, TP Liu, Y Sun, CQ Fung, S	2004	116
Influence of Si nanocrystal distributed in the gate oxide on the MOS capacitance Journal:IEEE Transactions on Electron Devices	Ng, CY Chen, TP Ding, L Yang, M Wong, JI Zhao, P Yang, XH Liu, KY Tse, MS Trigg, AD Fung, S	2006	70
Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures Journal:IEEE Transactions on Electron Devices	Liu, Y Chen, TP Ng, CY Ding, L Tse, MS Fung, S Tseng, AA	2006	73
Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay Journal:Applied Physics Letters	Ng, CY Chen, TP Tse, MS Lim, VSW Fung, S Tseng, AA	2005	67
The influence of the implantation dose and energy on the electroluminescence of Si +-implanted amorphous SiO 2 thin films Journal:Nanotechnology	Ding, L Chen, TP Liu, Y Yang, M Wong, JI Liu, KY Zhu, FR Fung, S	2007	37
Instabilities in gate-controlled-diode characteristics of n-MOSFETs following hot-carrier injection Journal:Semiconductor Science and Technology	Chen, TP Lo, KF Fung, S	1997	79
Interface trap generation by FN injection under dynamic oxide field stress Journal:IEEE Transactions on Electron Devices	Chen, TP Li, S Fung, S Lo, KF	1998	90
Interfacial Fermi level and surface band bending in Ni/semi-insulating GaAs contact Journal:Journal of Applied Physics	Chen, TP Liu, YC Fung, S Beling, CD	1995	95
Leakage current induced drop in E f in pes studies of Schottky barrier formation Journal:Solid State Communications	Chen, TP Fung, S Beling, CD	1994	57
Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals Journal:Applied Physics Letters	Liu, Z Chen, TP Liu, Y Ding, L Yang, M Wong, JI Cen, ZH Li, YB Zhang, S Fung, S	2008	98
Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam Journal:IEEE Electron Device Letters	Ng, CY Chen, TP Ding, L Fung, S	2006	64
Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering Journal:Applied Physics Letters	Liu, Y Chen, TP Zhao, P Zhang, S Fung, S Fu, YQ	2005	101
Numerical modeling of transient characteristics of photovoltage in Schottky contacts Journal:Journal of Applied Physics	Chen, TP Ho, SM Fung, S Beling, CD	1994	62
Numerical study of electrostatic properties of metal/semi-insulating GaAs contacts Journal:Solid State Communications	Chen, TP Liu, YC Fung, S Beling, CD	1995	71
Numerical study of the decay of photovoltage at metal-semiconductor interfaces Journal:Solid State Communications	Chen, TP Au, HL Lee, TC Ling, CC Beling, CD Fung, S	1993	41

Showing results 35 to 54 of 87 < previous next >