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Browsing by Author Lo, HB
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Showing results 1 to 16 of 16
Title
Author(s)
Issue Date
Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas
Journal:
Applied Physics Letters
Hsu, CC
Yang, YF
Ou, HJ
Yang, ES
Lo, HB
1997
Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's
Journal:
IEEE Transactions on Electron Devices
Lai, PT
Xu, JP
Wong, WM
Lo, HB
Cheng, YC
1998
Effects of annealing conditions on photoelectrical properties of Ba1-xSrxNbyTi1-yO3 thin-film resistor
Journal:
Smart Materials and Structures
Li, B
Lo, HB
Lai, PT
Liu, YR
Li, GQ
Huang, MQ
2006
Effects of post-deposition oxygen annealing on tuning properties of Ba 0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits
Journal:
Materials Chemistry and Physics
Liu, YR
Lai, PT
Li, GQ
Li, B
Peng, JB
Lo, HB
2005
Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC
Journal:
Solid-State Electronics
Yang, BL
Lin, LM
Lo, HB
Lai, PT
2005
Electron trapping and detrapping behaviors of thin thermally nitrided oxides
Proceeding/Conference:
Techical Digest of 1989 International Conference on VLSI and CAD (ICVC '89)
Lai, PT
Wong, H
Cheng, YC
Lo, HB
Liu, ZH
1989
Greatly suppressed stress-induced shift of GIDL in N 2O-based n-MOSFET's
Journal:
Solid-State Electronics
Xu, JP
Lai, PT
Huang, L
Lo, HB
Cheng, YC
1998
Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene
Journal:
Journal of the Electrochemical Society
Yang, BL
Lin, LM
Lo, HB
Lai, PT
Chan, CL
2005
Modeling of current gain's temperature dependence in heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Hsu, CC
Lo, HB
Yang, YF
2000
Off-state gate current with quasi-zero temperature coefficient in n-MOSFETs with reoxidized nitrided oxide as gate dielectric
Journal:
Microelectronics Reliability
Lai, PT
Xu, JP
Lo, HB
Cheng, YC
1998
Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation
Journal:
Applied Physics Letters
Lai, PT
Xu, J
Lo, HB
Cheng, YC
1997
A reliability comparison of InGaP/GaAs HBTs with and without passivation ledge
Journal:
Microelectronics Reliability
Van, BP
Yang, YF
Hsu, CC
Lo, HB
Yang, ES
2001
A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment
Journal:
Journal of Applied Physics
Lai, PT
Xu, JP
Lo, HB
Gheng, YC
1997
Suppression of hot-carrier-induced degradation in n-MOSFETS at low temperatures by N 2O-nitridation of gate oxide
Journal:
Solid-State Electronics
Lai, PT
Xu, JP
Huang, L
Lo, HB
Cheng, YC
1998
Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors
Journal:
IEEE Transactions on Electron Devices
Yang, ES
Yang, YF
Hsu, CC
Ou, HJ
Lo, HB
1999
Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor
Journal:
Applied Physics Letters
Lo, HB
Yang, ES
Yang, YF
1999
