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Showing results 207 to 226 of 457 < previous next >

Title	Author(s)	Issue Date	Views
IMECS 2011 - International MultiConference of Engineers and Computer Scientists 2011: Preface Journal:IMECS 2011 - International MultiConference of Engineers and Computer Scientists 2011	Abdelkader, YH AitKadi, D AlNajjar, B Allahverdi, A Amavasai, BP Henggeler, C Bouchaffra, D Bose, I Brabazon, A Brdys, M Cacheda, F Chan, AHS Chan, FTS Chang, CC Chaudhuri, P Chen, CH Chen, CS Chen, MS Chen, Q Choy, W Chung, TS Clubb, OL Damasio, MJ Dang, C Djordjevich, A Fung, YF Ganesan, G Leng, RGK Sing, GO Gracia, AM Gu, Z Gulpinar, N HeatonAdegbile, P HerreraViedma, E Herrero, JR Huang, X Hwang, CK Hwang, HS Ishihara, S Jia, L Kannan, R Karatzas, GP Katagiri, H Kendall, G Kikuta, K Kim, HK Kim, SI Kothari, C Krishnamoorthy, M Kumamoto, T Kwan, R Lee, HW Li, L Li, X Li, Y Lin, CM Liu, B Liu, L Lopez, EMM Luk, C Maeda, K Mahanti, PK Mahmoud, QH Matsatsinis, N Mavrommatis, G McGuigan, M Melin, P Mikhailov, L Mineno, H Monsuur, H Moon, C Murua, A Musliu, N Nakache, D Ni, J Nolle, L Ozalp, AA Pang, WK Papadopoulos, AN Piramuthu, S Premachandra, IM Seng, QT Sharma, D Sheu, JB Sheu, SH Resteanu, CIG Romero, C Saito, S Sawik, T Seva, RR Shakshuki, E Singh, V Siskos, Y Stoyan, YG Sun, J Sun, Z Rad, AB Resta, M Rodriguez, ML Rojas, R Tiwari, MK Tran, D Triguero, FH Tseng, LY Tsuda, S Tzeng, GH Utkin, LV Vaz, I Luis, JV Wang, HF Wang, L Wang, SH Watanabe, T Werner, F Wojnicki, I Wu, EX Wu, T Xie, G Xu, L Xu, SH Yang, GC Yang, XS Yu, KM Zanni, C Zhang, X Zhang, ZG Zhao, Y Zhao, Y Zopounidis, C	2011	188
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate Journal:IEEE Transactions on Electron Devices	Cheng, ZX Liu, L Xu, JP Huang, Y Lai, PT Tang, WM	2016	41
Improved 1 km resolution PM2.5 estimates across China using enhanced space–time extremely randomized trees Journal:Atmospheric Chemistry and Physics	Wei, J Li, Z Cribb, M Huang, W Xue, W Sun, L Guo, J Peng, Y Li, J Lyapustin, A Liu, L Wu, H Song, Y	2020
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3 Journal:Applied Physics A: materials science & processing	Liu, L Xu, JP Chen, JX Lai, PT	2014
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films Journal:Applied Physics Letters	Huang, XD Liu, L Xu, JP Lai, PT	2011	166
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure Journal:Applied Physics Letters	Liu, L Xu, J Chen, JX Ji, F Lai, PT	2012
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric Journal:Applied Physics Express	ZHAO, X XU, J LIU, L Lai, PT TANG, WM	2019	22
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric Journal:IEEE Transactions on Electron Devices	Wen, M Xu, JP Liu, L Lai, PT Tang, WM	2017	55
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer Journal:Physica Status Solidi - Rapid Research Letters	LIU, L Choi, HW Xu, JP Lai, PT	2017	70
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Zhao, X Xu, JP Liu, L Lai, PT Tang, WM	2019
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric Journal:Applied Surface Science	SONG, X XU, J LIU, L Lai, PT TANG, WM	2019	12
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer Journal:IEEE Transactions on Device and Materials Reliability	Lu, HH Xu, JP Liu, L Lai, PT Tang, WM	2017	50
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices	Lu, HH Liu, L Xu, JP Lai, PT Tang, WM	2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer Journal:Applied Physics Letters	Cheng, ZX Xu, JP Liu, L Huang, Y Lai, PT Tang, WM	2016	61
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer Journal:Applied Physics Letters	HUANG, Y XU, JP LIU, L CHENG, ZX Lai, PT TANG, WM	2017	26
Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer Journal:IEEE Transactions on Electron Devices	Ji, FENG Xu, J Huang, Y Liu, L Lai, PT	2014
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation Journal:Applied Physics Letters	Huang, Y Xu, JP Liu, L Lai, PT Tang, WM	2016	55
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment Journal:Applied Surface Science	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2019	18
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric Journal:IEEE Electron Device Letters	Zhao, XY Xu, JP Liu, L Lai, PT Tang, WM	2020	18
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer Journal:Microelectronics Reliability	Lu, HH Xu, JP Liu, L Wang, LS Lai, PT Tang, WM	2016	49

Showing results 207 to 226 of 457 < previous next >