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Browsing by Author Xu, JP
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Showing results 1 to 11 of 11
Title
Author(s)
Issue Date
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Journal:
Applied Physics Express
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Proceeding/Conference:
IEEE Electron Device Letters
Deng, LF
Lai, PT
Chen, WB
Xu, JP
Liu, YR
Choi, HW
Che, CM
2011
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Journal:
Applied Physics Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2017
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Proceeding/Conference:
IEEE Semiconductor Interface Specialists Conference
Liu, LN
Choi, HW
Xu, JP
Lai, PT
2016
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, LN
Choi, HW
Lai, PT
Xu, JP
2016
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:
Microelectronics Reliability
Lu, HH
Xu, JP
Liu, L
Wang, LS
Lai, PT
Tang, WM
2016
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
A simplified post-soft-breakdown current model for MOS devices
Journal:
Applied Physics A: Materials Science and Processing
Li, ZL
Xu, JP
Lai, PT
2009