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Title	Author(s)	Issue Date	Views
A burst-based unsupervised method for detecting review spammer groups Journal:Information Sciences	Ji, S Zhang, Q Li, J Chiu, DKW Xu, S Yi, L Gong, M	2020	63
A deceptive reviews detection model: Separated training of multi-feature learning and classification Journal:Expert Systems with Applications	Cao, N Ji, S Chiu, KWD Gong, M	2022	13
Access and Unmet Needs of Orphan Drugs in 194 Countries and 6 Areas: A Global Policy Review With Content Analysis Journal:Value in Health	Chan, AYL CHAN, VKY Olsson, S FAN, M Jit, M Gong, M Zhan, S GE, M Pathadka, S CHUNG, CCY Chung, BHY Chui, CSL Chan, EW Wong, GHY Lum, TY Wong, ICK Ip, P Li, X	2020	48
Aluminum and electron-irradiation induced deep-levels in n-type and p-type 6H-SiC Proceeding/Conference:Defect and impurity engineered semiconductors II, Materials Research Society Symposium Proceedings	Gong, M Beling, CD Fung, SHY Brauer, G Wirth, H Skorupa, W You, ZP	1998	98
Aluminum-implantation-induced deep levels in n-type 6H–SiC Journal:Journal of Applied Physics	Fung, SHY Gong, M Beling, CD Brauer, G Wirth, H Skorupa, W	1998	213
An efficient dual semantic preserving hashing for cross-modal retrieval Journal:Neurocomputing	Liu, Y Ji, S Fu, Q Chiu, KWD Gong, M	2022
Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide Journal:Applied Physics Letters	Chen, XD Ling, CC Gong, M Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W	2005	126
Beryllium implantation induced deep level defects in p-type 6h-silicon carbide Journal:Journal of Applied Physics	Chen, XD Ling, CC Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2003	178
Beryllium implantation induced deep levels in 6H-silicon carbide Journal:Physica B: Condensed Matter	Chen, XD Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2001	150
Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP Journal:Applied Physics Letters	Fung, S Zhao, YW Beling, CD Xu, XL Gong, M Sun, NF Sun, TN Chen, XD Zhang, RG Liu, SL Yang, GY Qian, JJ Sun, MF Liu, XL	1998	164
Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation Proceeding/Conference:AIP Conference Proceedings	Ling, CC Chen, XD Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W Gong, M	2005	134
Deep level defects in 6H silicon carbide Journal:物理	Ling, CC Chen, XD Fung, SHY Beling, CD Gong, M Ge, WK Wang, JN Brauer, G Anwand, W Skorupa, W	2004	139
Deep level defects in 6H silicon carbide induced by particles irradiations Proceeding/Conference:The National Conference of Semiconductor Physics	Ling, FCC Chen, X Gong, M Ge, WK Wang, JN Yang, CL Brauer, G Anwand, W Skorupa, W Beling, CD Fung, SHY Wang, HY Weng, HM	2005	95
Deep level transient spectroscopic study of electron irradiated p-type 6H-SiC Proceeding/Conference:光电信息材料会议	Zhong, ZQ Gong, M Chen, X Ling, FCC Fung, SHY Beling, CD	2006	107
Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC Journal:Journal of Applied Physics	Chen, XD Fung, S Ling, CC Beling, CD Gong, M	2003	210
A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC Journal:Journal of Applied Physics	Chen, XD Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2000	140
A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC Journal:Journal of Applied Physics	Gong, M Fung, SHY Beling, CD You, Z	1999	179
Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC Proceeding/Conference:Bulletin of the American Physical Society	Chen, XD Gong, M Fung, SHY Beling, CD Ling, FCC	2004	90
Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC Journal:Applied Physics Letters	Gong, M Reddy, CV Beling, CD Fung, S Brauer, G Wirth, H Skorupa, W	1998	174
Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadening Journal:Journal of Non-Crystalline Solids	Zou, X Webb, DP Chan, YC Lam, YW Hu, YF Gong, M Beling, CD Fung, S	1998	85

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