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Showing results 1 to 10 of 10

	Title	Author(s)	Issue Date
	A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration Journal:IEEE Electron Device Letters	Tran, X. A.Yu, H. Y.Yeo, Y. C.Wu, L.Liu, W. J.Wang, Z. R.Fang, Z.Pey, K. L.Sun, X. W.Du, A. Y.Nguyen, B. Y.Li, M. F.	2011
	A self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode Journal:IEEE Electron Device Letters	Tran, X. A.Zhu, W. G.Gao, B.Kang, J. F.Liu, W. J.Fang, Z.Wang, Z. R.Yeo, Y. C.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2012
	High performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application Proceeding/Conference:2011 Symposium on VLSI Technology - Digest of Technical Papers	Tran, X. A.Gao, B.Kang, J. F.Wu, L.Wang, Z. R.Fang, Z.Pey, K. L.Yeo, Y. C.Du, A. Y.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2011
	Highly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping Journal:IEEE Transactions on Electron Devices	Wang, Zhongrui Zhu, W. G.Du, A. Y.Wu, L.Fang, Z.Tran, X. A.Liu, W. J.Zhang, K. L.Yu, H. Y.	2012
	Mechanism of different switching directions in graphene oxide based RRAM Journal:Journal of the Electrochemical Society	Wang, Zhongrui Tjoa, V.Wu, L.Liu, W. J.Fang, Z.Tran, X. A.Wei, J.Zhu, W. G.Yu, H. Y.	2012
	Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Gao, B.Kang, J. F.Chen, Y. S.Zhang, F. F.Chen, B.Huang, P.Liu, L. F.Liu, X. Y.Wang, Y. Y.Tran, X. A.Wang, Z. R.Yu, H. Y.Chin, Albert	2011
	Positive bias-induced V<inf>th</inf> instability in graphene field effect transistors Journal:IEEE Electron Device Letters	Liu, W. J.Sun, X. W.Fang, Z.Wang, Z. R.Tran, X. A.Wang, F.Wu, L.Ng, G. I.Zhang, J. F.Wei, J.Zhu, H. L.Yu, H. Y.	2012
	Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Tran, X. A.Gao, B.Kang, J. F.Wu, X.Wu, L.Fang, Z.Wang, Z. R.Pey, K. L.Yeo, Y. C.Du, A. Y.Liu, M.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2011
	Temperature instability of resistive switching on HfO<inf>x</inf>-based RRAM devices Journal:IEEE Electron Device Letters	Fang, Z.Yu, H. Y.Liu, W. J.Wang, Z. R.Tran, X. A.Gao, B.Kang, J. F.	2010
	V<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection Journal:IEEE Transactions on Device and Materials Reliability	Liu, W. J.Sun, X. W.Tran, X. A.Fang, Z.Wang, Z. R.Wang, F.Wu, L.Zhang, J. F.Wei, J.Zhu, H. L.Yu, H. Y.	2012

Showing results 1 to 10 of 10