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Showing results 1 to 14 of 14

	Title	Author(s)	Issue Date	Views
	A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration Journal:IEEE Electron Device Letters	Tran, X. A.Yu, H. Y.Yeo, Y. C.Wu, L.Liu, W. J.Wang, Z. R.Fang, Z.Pey, K. L.Sun, X. W.Du, A. Y.Nguyen, B. Y.Li, M. F.	2011	11
	A self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode Journal:IEEE Electron Device Letters	Tran, X. A.Zhu, W. G.Gao, B.Kang, J. F.Liu, W. J.Fang, Z.Wang, Z. R.Yeo, Y. C.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2012	12
	Bias temperature instability of binary oxide based reram Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Fang, Z.Yu, H. Y.Liu, W. J.Pey, K. L.Li, X.Wu, L.Wang, Z. R.Lo, Patrick G.Q.Gao, B.Kang, J. F.	2010	5
	High performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application Proceeding/Conference:2011 Symposium on VLSI Technology - Digest of Technical Papers	Tran, X. A.Gao, B.Kang, J. F.Wu, L.Wang, Z. R.Fang, Z.Pey, K. L.Yeo, Y. C.Du, A. Y.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2011	8
	Highly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping Journal:IEEE Transactions on Electron Devices	Wang, Zhongrui Zhu, W. G.Du, A. Y.Wu, L.Fang, Z.Tran, X. A.Liu, W. J.Zhang, K. L.Yu, H. Y.	2012	12
	Investigation of HfO<inf>2</inf> high-k dielectrics electronic structure on SiO<inf>2</inf>/Si substrate by x-ray photoelectron spectroscopy Journal:Applied Physics Letters	Duan, T. L.Yu, H. Y.Wu, L.Wang, Z. R.Foo, Y. L.Pan, J. S.	2011	11
	Mechanism of different switching directions in graphene oxide based RRAM Journal:Journal of the Electrochemical Society	Wang, Zhongrui Tjoa, V.Wu, L.Liu, W. J.Fang, Z.Tran, X. A.Wei, J.Zhu, W. G.Yu, H. Y.	2012	10
	Nanoscale electrical and physical study of polycrystalline high-κ dielectrics and proposed reliability enhancement techniques Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Shubhakar, K.Pey, K. L.Kushvaha, S. S.Bosman, M.O'Shea, S. J.Raghavan, N.Kouda, M.Kakushima, K.Wang, Z. R.Yu, H. Y.Iwai, H.	2011
	Oxide-based RRAM: A novel defect-engineering-based implementation for multilevel data storage Proceeding/Conference:2012 4th IEEE International Memory Workshop, IMW 2012	Kang, J. F.Gao, B.Chen, B.Liu, L. F.Liu, X. Y.Yu, H. Y.Wang, Z. R.Yu, B.	2012	9
	Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Gao, B.Kang, J. F.Chen, Y. S.Zhang, F. F.Chen, B.Huang, P.Liu, L. F.Liu, X. Y.Wang, Y. Y.Tran, X. A.Wang, Z. R.Yu, H. Y.Chin, Albert	2011	21
	Positive bias-induced V<inf>th</inf> instability in graphene field effect transistors Journal:IEEE Electron Device Letters	Liu, W. J.Sun, X. W.Fang, Z.Wang, Z. R.Tran, X. A.Wang, F.Wu, L.Ng, G. I.Zhang, J. F.Wei, J.Zhu, H. L.Yu, H. Y.	2012	12
	Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Tran, X. A.Gao, B.Kang, J. F.Wu, X.Wu, L.Fang, Z.Wang, Z. R.Pey, K. L.Yeo, Y. C.Du, A. Y.Liu, M.Nguyen, B. Y.Li, M. F.Yu, H. Y.	2011	17
	Temperature instability of resistive switching on HfO<inf>x</inf>-based RRAM devices Journal:IEEE Electron Device Letters	Fang, Z.Yu, H. Y.Liu, W. J.Wang, Z. R.Tran, X. A.Gao, B.Kang, J. F.	2010	10
	V<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection Journal:IEEE Transactions on Device and Materials Reliability	Liu, W. J.Sun, X. W.Tran, X. A.Fang, Z.Wang, Z. R.Wang, F.Wu, L.Zhang, J. F.Wei, J.Zhu, H. L.Yu, H. Y.	2012

Showing results 1 to 14 of 14