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	Title	Author(s)	Issue Date
	Large DC gain nonisolated converter based on a new L-C-D step-up switching cell Proceeding/Conference:IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS	Li, KeruiIoinovici, Adrian	2015
	A coarse-to-fine approach for motion pattern discovery Proceeding/Conference:Proceedings of the 2012 International Conference on Cyber-Enabled Distributed Computing and Knowledge Discovery, CyberC 2012	Cai, BolunLuo, ZhifengLi, Kerui	2012
	Building high performance transistors on carbon nanotube channel Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Pitner, GregorySafron, NathanielChao, Tzu AngLi, ShengmanSu, Sheng KaiZeevi, GiladLin, QingChiu, Hsin YuanPasslack, MatthiasZhang, ZichenSathaiya, D. MahaveerWei, AslanGilardi, CarloChen, EdwardLiew, San LinHou, Vincent D.H.Wu, Chung WeiWu, JeffLin, ZhiweiFagan, JeffreyZheng, MingWang, HanMitra, SubhasishPhilip Wong, H. S.Radu, Iuliana	2023
	Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Ma, YunweiXiao, MingZhang, YuhaoDu, ZhonghaoYan, XiaodongWang, HanCheng, KaiClavel, MichaelHudait, Mantu K.Tao, LeiLin, FengKravchenko, Ivan	2021
	NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Xiao, MingWang, BoyanZhang, RuizheSong, QihaoSpencer, JosephDu, ZhonghaoQin, YuanSasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao	2023
	Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Lee, Tsung EnSu, Yuan ChunLin, Bo JiunChen, Yi XuanYun, Wei ShengHo, Po HsunWang, Jer FuSu, Sheng KaiHsu, Chen FengMao, Po SenChang, Yu ChengChien, Chao HsinLiu, Bo HengSu, Chien YingKei, Chi ChungWang, HanPhilip Wong, H. S.Lee, T. Y.Chang, Wen HaoCheng, Chao ChingRadu, Iuliana P.	2022
	Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Yang, NingLin, Yuxuan CosmiChuu, Chih PiaoRahman, SaifurWu, TongChou, Ang ShengLiew, San LinFujiwara, KoheiChen, Hung YuIkeda, JunyaTsukazaki, AtsushiHou, Duen HueiWoon, Wei YenLiao, SzuyaHuang, ShengxiQian, XiaofengGuo, JingRadu, IulianaPhilip Wong, H. S.Wang, Han	2022
	High-Performance Monolayer WSe2 p/n FETs via Antimony-Platinum Modulated Contact Technology towards 2D CMOS Electronics Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Chou, Ang ShengLin, Yu TungLin, Yuxuan CosmiHsu, Ching HaoLi, Ming YangLiew, San LinChou, Sui AnChen, Hung YuChiu, Hsin YuanHo, Po HsunHsu, Ming ChunHsu, Yu WeiYang, NingWoon, Wei YenLiao, SzuyaHou, Duen HueiChien, Chao HsinChang, Wen HaoRadu, IulianaWu, Chih I.Philip Wong, H. S.Wang, Han	2022
	pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Hung, Terry Y.T.Li, Meng ZhanYun, Wei ShengChou, Sui AnSu, Sheng KaiChen, EdwardLiew, San LinYang, Ying MeiLin, Kuang I.Hou, VincentLee, T. Y.Wang, HanCheng, AlbertLin, Minn TsongWong, H. S.PhilipRadu, Iuliana P.	2022
	First Demonstration of GAA Monolayer-MoS<inf>2</inf>Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Chung, Yun YanChou, Bo JhihHsu, Chen FengYun, Wei ShengLi, Ming YangSu, Sheng KaiLiao, Yu TsungLee, Meng ChienHuang, Guo WeiLiew, San LinShen, Yun YangChang, Wen HaoChen, Chien WeiKei, Chi ChungWang, HanPhilip Wong, H. S.Lee, T. Y.Chien, Chao HsinCheng, Chao ChingRadu, Iuliana P.	2022
	Comprehensive Physics Based TCAD Model for 2D MX<inf>2</inf>Channel Transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Sathaiya, D. MahaveerHung, Terry Y.T.Chen, EdwardWu, Wen ChiaWei, AslanChuu, Chih PiaoSu, Sheng KaiChou, Ang ShengChung, Cheng TingChien, Chao HsinWang, HanCai, JinWu, Chung ChengRadu, Iuliana P.Wu, Jeff	2022
	First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, MingMa, YunweiDu, ZhonghaoQin, YuanLiu, KaiCheng, KaiUdrea, FlorinXie, AndyBeam, EdwardWang, BoyanSpencer, JosephTadjer, MarkoAnderson, TravisWang, HanZhang, Yuhao	2022
	Optical Phase Anisotropy in Layered Black Phosphorus Proceeding/Conference:Optics InfoBase Conference Papers	Lan, ShoufengWang, XiaomuRodrigues, SeanWang, LuohaoCui, YonghaoWang, HanXia, FengnianCai, Wenshan	2016
	Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS<inf>2</inf>Transistor Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Li, Ming YangHsu, Ching HaoShen, Shin WeiChou, Ang ShengLin, Yuxuan CosmiChuu, Chih PiaoYang, NingChou, Sui AnHuang, Lin YunCheng, Chao ChingWoon, Wei YenLiao, SzuyaWu, Chih I.Li, Lain JongRadu, IulianaWong, H. S.PhilipWang, Han	2022
	Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Su, Sheng KaiChen, EdwardHung, Terry Y.T.Li, Meng ZhanPitner, GregoryCheng, Chao ChingWang, HanCai, JinWong, H. S.PhilipRadu, Iuliana P.	2022
	Multi-Channel Monolithic-Cascode HEMT (MC<sup>2</sup>-HEMT): A New GaN Power Switch up to 10 kV Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, M.Ma, Y.Du, Z.Pathirana, V.Cheng, K.Xie, A.Beam, E.Cao, Y.Udrea, F.Wang, H.Zhang, Y.	2021
	Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Chou, Ang ShengWu, TongCheng, Chao ChingZhan, Shun SiangNi, I. ChihWang, Shih YunChang, Yu ChenLiew, San LinChen, EdwardChang, Wen HaoWu, Chih I.Cai, JinWong, H. S.PhilipWang, Han	2021
	Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Lin, Y.Shen, P. C.Su, C.Chou, A. S.Wu, T.Cheng, C. C.Park, J. H.Chiu, M. H.Lu, A. Y.Tang, H. L.Tavakoli, M. M.Pitner, G.Ji, X.McGahan, C.Wang, X.Cai, Z.Mao, N.Wang, J.Wang, Y.Tisdale, W.Ling, X.Aidala, K. E.Tung, V.Li, J.Zettl, A.Wu, C. I.Guo, JingWang, H.Bokor, J.Palacios, T.Li, L. J.Kong, J.	2021
	Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Cui, YongjieChen, Hung YuChen, ShuoqiLinkhart, DouglasTan, HaosenWu, JiangbinYoon, SoackGeiler, MichaelGeiler, AntonBeam, EdwardXie, AndyWang, NanRegan, MichaelKruzich, MarkNguyen, BruceWhite, DonaldKetterson, AndrewLee, CathyWillis, DavidWang, HanCao, Yu	2021
	Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Mutlu, Z.Lin, Y.Barin, G. B.Zhang, Z.Pitner, G.Wang, S.Darawish, R.Giovannantonio, M. DiWang, H.Cai, J.Passlack, M.Diaz, C. H.Narita, A.Mullen, K.Fischer, F. R.Bandaru, P.Kummel, A. C.Ruffieux, P.Fasel, R.Bokor, J.	2021