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	Title	Author(s)	Issue Date
	Monolayer MoS<inf>2</inf> for nonvolatile memory applications Proceeding/Conference:2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings	Chang, Kai PingWang, Jer ChyiChen, Chang HsiaoLi, Lain JongLai, Chao Sung	2017
	Photoluminescence enhancement in defect monolayer MoSe<inf>2</inf> by hydrohalic acid treatment Proceeding/Conference:2016 Conference on Lasers and Electro-Optics, CLEO 2016	Kao, Tsung ShengHan, Hau VeiLu, Ang YuLu, Li SyuanHuang, Jing KaiKuo, Hao ChungChang, Wen HaoLi, Lain JongShi, Yumeng	2016
	A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET Proceeding/Conference:International Electron Devices Meeting (IEDM)	Tang, Ying TsanLi, Kai ShinLi, Lain JongLi, Ming YangLin, Chang HsienChen, Yi JuChen, Chun ChiSu, Chuan JungWu, Bo WeiWu, Cheng SanChen, Min ChengShieh, Jia MinYeh, Wen KuanSu, Po ChengWang, TahuiYang, Fu LiangHu, Chenming	2017
	MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Li, Kai ShinWu, Bo WeiLi, Lain JongLi, Ming YangCheng, Chia Chin KevinHsu, Cho LunLin, Chang HsienChen, Yi JuChen, Chun ChiWu, Chien TingChen, Min ChengShieh, Jia MinYeh, Wen KuanChueh, Yu LunYang, Fu LiangHu, Chenming	2016
	Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films Proceeding/Conference:Japanese Journal of Applied Physics	Matsuki, KeiichiroPu, JiangKozawa, DaichiMatsuda, KazunariLi, Lain JongTakenobu, Taishi	2016
	TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM)	Chen, Min ChengLi, Kai ShinLi, Lain JongLu, Ang YuLi, Ming YangChang, Yung HuangLin, Chang HsienChen, Yi JuHou, Yun FangChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenShieh, Jia MinYeh, Wen KuanShih, Jyun HongSu, Po ChengSachid, Angada B.Wang, TahuiYang, Fu LiangHu, Chenming	2015
	TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier Proceeding/Conference:Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002	Chiang, C. C.Chen, M. C.Wu, Z. C.Li, L. J.Jang, S. M.Yu, C. H.Liang, M. S.	2002
	Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping Proceeding/Conference:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA	Lin, Chih PinLyu, Li SyuanLin, Ching TingLiu, Pang ShiuanChang, Wen HaoLi, Lain JongHou, Tuo Hung	2015
	Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs Proceeding/Conference:International Electron Devices Meeting (IEDM)	Chen, Min ChengLin, Chia YiLi, Kai HsinLi, Lain JongChen, Chang HsiaoChuang, Cheng HaoLee, Ming DaoChen, Yi JuHou, Yun FangLin, Chang HsienChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenYeh, Wen KuanWang, TahuiYang, Fu LiangHu, Chenming	2015
	Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe<inf>2</inf> Proceeding/Conference:International Electron Devices Meeting (IEDM)	Liu, Pang ShiuanChen, Chang HsiaoHsu, Wei TingLin, Chih PinLin, Tzu PingChi, Li JenChang, Chao YuanWu, Shih ChiehChang, Wen HaoLi, Lain JongHou, Tuo Hung	2015
	Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate Proceeding/Conference:Japanese Journal of Applied Physics	Funahashi, KazumaPu, JiangLi, Ming YangLi, Lain JongIwasa, YoshihiroTakenobu, Taishi	2015
	Optical properties of nitrogen-doped graphene thin films probed by spectroscopic ellipsometry Proceeding/Conference:Thin Solid Films	Shen, C. C.Tseng, C. C.Lin, C. T.Li, L. J.Liu, H. L.	2014
	Novel functional devices of transition metal dichalcogenide monolayers Proceeding/Conference:Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials	Takenobu, TaishiPu, JiangLi, Lain JongIwasa, Yoshihiro	2014
	Transient terahertz spectroscopy of mono- and tri-layer CVD-grown MoS <inf>2</inf> Proceeding/Conference:International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz	Docherty, Callum J.Joyce, Hannah J.Li, Lain JongJohnston, Michael B.	2013
	Chemical vapor deposited MoS2 thin layers and their applications Proceeding/Conference:ECS Transactions	Liu, K. K.Lee, Y. H.Lin, Y. C.Huang, J. K.Zhang, X. Q.Lin, T. W.Li, L. J.	2012
	Large-scale 2D electronics based on single-layer MoS<inf>2</inf> grown by chemical vapor deposition Proceeding/Conference:International Electron Devices Meeting (IEDM)	Wang, H.Yu, L.Lee, Y. H.Fang, W.Hsu, A.Herring, P.Chin, M.Dubey, M.Li, L. J.Kong, J.Palacios, T.	2012
	One-step formation of atomic-layered transistor by selective fluorination of graphene film Proceeding/Conference:Proceedings - Winter Simulation Conference	Ho, Kuan I.Liao, Jia HongHuang, Chi HsienHsu, Chang LungLi, Lain JongLai, Chao SungSu, Ching Yuan	2013
	Modification of the band gaps and optical properties of single-walled carbon nanotubes Proceeding/Conference:AIP Conference Proceedings	Wiltshire, J. G.Li, L. J.Khlobystov, A. N.Glerup, M.Bernier, P.Nicholas, R. J.	2005
	Comparative study of photoluminescence of single-walled carbon nanotubes wrapped with sodium dodecyl sulfate, surfactin and polyvinylpyrrolidone Proceeding/Conference:Nanotechnology	Li, Lain JongNicholas, R. J.Chen, Chien YenDarton, R. C.Baker, S. C.	2005
	Mid-infrared luminescence from coupled quantum dots and wells Proceeding/Conference:Physica E: Low-Dimensional Systems and Nanostructures	Shields, P. A.Li, L. J.Nicholas, R. J.	2004