Browsing by Author Su, Sheng Kai

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Showing results 1 to 11 of 11
TitleAuthor(s)Issue Date
 
2022
Building high performance transistors on carbon nanotube channel
Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology
2023
Comprehensive Physics Based TCAD Model for 2D MX<inf>2</inf>Channel Transistors
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
2022
 
2019
2019
First Demonstration of GAA Monolayer-MoS<inf>2</inf>Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
2022
 
2019
Impact of schottky barrier on the performance of two-dimensional material transistors
Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2020
Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
2022
Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS
Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology
2022
pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
2022