Browsing by Author Huang, XD

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TitleAuthor(s)Issue DateViews
 
Blind extraction of short-sampled signal based on time structure
Journal:Tien Tzu Hsueh Pao/Acta Electronica Sinica
Huang, XDHu, YLiu, HT
2012
44
 
Charge-Trapping Characteristics of BaTiO3 with and without Nitridation for Nonvolatile Memory Applications
Journal:Microelectronics Reliability
Huang, XDShi, RPLeung, CHLai, PT
2014
86
 
Charge-Trapping Characteristics of Fluorinated Thin ZrO2 Film for Nonvolatile Memory Applications
Journal:Applied Physics Letters
Huang, XDShi, RPLai, PT
2014
34
 
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Liu, LXu, JPHuang, XDJi, FLai, PT
2010
155
 
Comparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Song, JQLai, PTHuang, XD
2016
54
 
Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network
Journal:Advanced Electronic Materials
Han, CYFang, SLCui, YLLiu, WHFan, SQHuang, XDLi, XWang, XLZhang, GHTang, WMLai, PTLiu, JWan, XJYu, ZGeng, L
17-Apr-2023
 
Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure
Journal:IEEE Electron Device Letters
Zhang, CLi, DLai, PTHuang, XD
2021
1
 
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Qian, LXHuang, XDLai, PT
2011
105
 
Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor
Journal:IEEE Transactions on Electron Devices
Huang, XDMA, YSONG, JLai, PTTang, WM
2018
37
 
Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor
Journal:ECS Solid State Letters
Huang, XDSong, JLai, PT
2015
48
 
Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode
Journal:RSC Advances
Huang, XDZhang, FGan, XFHuang, QAYang, JZLai, PTTang, WM
2018
45
 
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Electron Devices
Huang, XDSin, JKOLai, PT
2011
160
 
HfTiON as charge-trapping layer for nonvolatile memory applications
Proceeding/Conference:ECS Meeting
Huang, XDLai, PT
2012
46
 
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature
Journal:Journal of Display Technology
Huang, XDMa, YSONG, JLai, PT
2016
45
 
Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications
Proceeding/Conference:ECS Transactions
Huang, XDLai, PT
2015
57
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:Applied Physics Letters
Huang, XDLiu, LXu, JPLai, PT
2011
158
 
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:Microelectronics Reliability
Chen, JXXu, JPLiu, LHuang, XDLai, PT
2014
44
 
Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment
Journal:IEEE Electron Device Letters
Huang, XDSONG, JLai, PT
2016
35
 
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications
Journal:IEEE Transactions on Device and Materials Reliability
Huang, XDLiu, LXu, JPLai, PT
2011
178
 
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment
Journal:IEEE Electron Device Letters
Huang, XDSONG, JLai, PT
2017
32
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