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Showing results 4 to 23 of 35 < previous next >

Title	Author(s)	Issue Date	Views
Charge-Trapping Characteristics of BaTiO3 with and without Nitridation for Nonvolatile Memory Applications Journal:Microelectronics Reliability	Huang, XD Shi, RP Leung, CH Lai, PT	2014	93
Charge-Trapping Characteristics of Fluorinated Thin ZrO2 Film for Nonvolatile Memory Applications Journal:Applied Physics Letters	Huang, XD Shi, RP Lai, PT	2014	39
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Liu, L Xu, JP Huang, XD Ji, F Lai, PT	2010	165
Comparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Song, JQ Lai, PT Huang, XD	2016
Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network Journal:Advanced Electronic Materials	Han, CY Fang, SL Cui, YL Liu, WH Fan, SQ Huang, XD Li, X Wang, XL Zhang, GH Tang, WM Lai, PT Liu, J Wan, XJ Yu, Z Geng, L	17-Apr-2023
Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure Journal:IEEE Electron Device Letters	Zhang, C Li, D Lai, PT Huang, XD	2021	1
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings	Qian, LX Huang, XD Lai, PT	2011	110
Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor Journal:IEEE Transactions on Electron Devices	Huang, XD MA, Y SONG, J Lai, PT Tang, WM	2018
Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor Journal:ECS Solid State Letters	Huang, XD Song, J Lai, PT	2015	56
Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode Journal:RSC Advances	Huang, XD Zhang, F Gan, XF Huang, QA Yang, JZ Lai, PT Tang, WM	2018
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications Journal:IEEE Transactions on Electron Devices	Huang, XD Sin, JKO Lai, PT	2011	171
HfTiON as charge-trapping layer for nonvolatile memory applications Proceeding/Conference:ECS Meeting	Huang, XD Lai, PT	2012	60
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature Journal:Journal of Display Technology	Huang, XD Ma, Y SONG, J Lai, PT	2016	52
Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications Proceeding/Conference:ECS Transactions	Huang, XD Lai, PT	2015
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films Journal:Applied Physics Letters	Huang, XD Liu, L Xu, JP Lai, PT	2011	166
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory Journal:Microelectronics Reliability	Chen, JX Xu, JP Liu, L Huang, XD Lai, PT	2014
Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment Journal:IEEE Electron Device Letters	Huang, XD SONG, J Lai, PT	2016	41
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications Journal:IEEE Transactions on Device and Materials Reliability	Huang, XD Liu, L Xu, JP Lai, PT	2011	197
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment Journal:IEEE Electron Device Letters	Huang, XD SONG, J Lai, PT	2017	37
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer Journal:IEEE Transactions on Device and Materials Reliability	Chen, JX Xu, JP Liu, L HUANG, XD Lai, PT Xu, HX	2014	25

Showing results 4 to 23 of 35 < previous next >