Browsing by Author TANG, WM

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中
Showing results 133 to 152 of 290 < previous   next >
TitleAuthor(s)Issue DateViews
 
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:IEEE Transactions on Electron Devices
Cheng, ZXLiu, LXu, JPHuang, YLai, PTTang, WM
2016
37
 
Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric
Journal:Organic Electronics
MA, YTang, WMLai, PT
2022
 
Improved Characteristics of InGaZnO Thin-Film Transistor by using Fluorine Implant
Journal:ECS Solid State Letters
Qian, LXTang, WMLai, PT
2014
41
 
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Journal:Applied Physics Express
ZHAO, XXU, JLIU, LLai, PTTANG, WM
2019
22
 
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:IEEE Transactions on Electron Devices
Wen, MXu, JPLiu, LLai, PTTang, WM
2017
47
 
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, XXu, JPLiu, LLai, PTTang, WM
2019
18
 
Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by La doping
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, YLai, PTTang, WM
2016
44
 
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Journal:Applied Surface Science
SONG, XXU, JLIU, LLai, PTTANG, WM
2019
12
 
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:IEEE Transactions on Device and Materials Reliability
Lu, HHXu, JPLiu, LLai, PTTang, WM
2017
48
 
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:IEEE Transactions on Electron Devices
Lu, HHLiu, LXu, JPLai, PTTang, WM
2017
50
 
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:Applied Physics Letters
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2016
56
 
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:Applied Physics Letters
HUANG, YXU, JPLIU, LCHENG, ZXLai, PTTANG, WM
2017
26
 
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:Applied Physics Letters
Huang, YXu, JPLiu, LLai, PTTang, WM
2016
47
 
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:Applied Surface Science
Huang, YXu, JPLiu, LCheng, ZXLai, PTTang, WM
2019
18
 
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:IEEE Electron Device Letters
Zhao, XYXu, JPLiu, LLai, PTTang, WM
2020
20
 
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:Microelectronics Reliability
Lu, HHXu, JPLiu, LWang, LSLai, PTTang, WM
2016
46
 
Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC)
Tang, WMCheng, KHLeung, CHLai, PTXu, JChe, CM
2007
139
 
Improved performance of Pd/WO3/SiC Schottky-diode hydrogen gas sensor by using fluorine plasma treatment
Journal:Applied Physics Letters
LIU, YTang, WMLai, PT
2015
33
 
Improved performance of pentacene organic thin-film transistor by using fluorine-implanted HfLaO as gate dielectric
Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference, SISC 2014
Han, CYTang, WMLeung, CHChe, CMLai, PT
2014
25
 
Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Ma, YXLiu, LNTang, WMLai, PT
2017
12
Showing results 133 to 152 of 290 < previous   next >