Browsing by Author XU, JP

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Showing results 1 to 18 of 18
TitleAuthor(s)Issue Date
 
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CXLai, PTXu, JPZou, X
2007
 
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Journal:Applied Physics Express
Wen, MXu, JPLiu, LLai, PTTang, WM
2016
 
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:IEEE Transactions on Device and Materials Reliability
Deng, LFLiu, YRChoi, HWXu, JPChe, CMLai, PT
2012
 
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Proceeding/Conference:IEEE Electron Device Letters
Deng, LFLai, PTChen, WBXu, JPLiu, YRChoi, HWChe, CM
2011
 
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Tang, WMLeung, CHLai, PTXu, JP
2006
 
Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer
Journal:IEEE Transactions on Electron Devices
Lu, HHXu, JPLiu, LLai, PTTang, WM
2017
 
Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation
Journal:Sensors and Actuators, A: Physical
Tang, WMLai, PTXu, JPChan, CL
2005
 
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Journal:Applied Physics Letters
LIU, LChoi, HWXu, JPLai, PT
2017
 
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference
Liu, LNChoi, HWXu, JPLai, PT
2016
 
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:IEEE Transactions on Electron Devices
Wen, MXu, JPLiu, LLai, PTTang, WM
2017
 
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, LNChoi, HWLai, PTXu, JP
2016
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:Applied Physics Letters
Ji, FXu, JPLiu, JGLi, CXLai, PT
2011
 
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:IEEE Transactions on Device and Materials Reliability
Lu, HHXu, JPLiu, LLai, PTTang, WM
2017
 
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:IEEE Transactions on Electron Devices
Lu, HHLiu, LXu, JPLai, PTTang, WM
2017
 
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:Applied Physics Letters
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2016
 
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:Microelectronics Reliability
Lu, HHXu, JPLiu, LWang, LSLai, PTTang, WM
2016
 
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Journal:IEEE Transactions on Electron Devices
Huang, YXu, JPLiu, LLai, PTTang, WM
2016
 
A simplified post-soft-breakdown current model for MOS devices
Journal:Applied Physics A: Materials Science and Processing
Li, ZLXu, JPLai, PT
2009
Showing results 1 to 18 of 18