Browsing by Author Ng, WT

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TitleAuthor(s)Issue DateViews
 
A novel technique of N2O-treatment on NH3-nitrided oxide for fabricating gate oxide in nMOSFET's
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
1995
148
 
1997
197
 
Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress
Proceeding/Conference:IEEE Region International Conference on Microelectronics and VLSI Proceedings
1995
102
 
2020
74
Effects of backsurface Ar+ bombardment on n-MOSFET's with nitride gate oxides
Proceeding/Conference:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
1997
100
 
Electrical performance and reliability of n-MOSFET's with gate dielectrics fabricated by different techniques
Proceeding/Conference:International Electron Devices Meeting IEDM Technical Digest
1994
83
 
Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1994
162
 
1995
198
 
A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
Proceeding/Conference:I E E E International Conference on Semiconductor Electronics Proceedings
1996
56
 
Latch-up characteristics of a trench-gate conductivity modulated power transistor
Proceeding/Conference:IEEE Region International Conference on Microelectronics and VLSI Proceedings
1995
107
 
2003
68
 
1995
233
 
A new lateral trench-gate conductivity modulated power transistor
Journal:IEEE Transactions on Electron Devices
1999
163
 
1996
108
 
1995
148
 
1995
293
RTP formed oxynitride via direct nitridation in N 2
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
89
 
To the editor
Journal:World Journal of Surgery
1992
50
 
Treatment of persistent/recurrent nodal disease in nasopharyngeal cancer
Journal:Current Opinion in Otolaryngology & Head and Neck Surgery
2021
13
 
Ultrathin oxynitride formation by low energy ion-implantation
Proceeding/Conference:Proceedings of International Conference on VLSI and CAD (ICVC)
1999
28