Browsing by Author XU, JP

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TitleAuthor(s)Issue Date
 
GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer
Journal:IEEE Transactions on Electron Devices
LIU, LChoi, HWXu, JPTang, WMLai, PT
2018
 
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Chen, WBXu, JPLai, PTLi, YPXu, SG
2006
 
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Journal:Applied Physics Letters
LIU, LChoi, HWXu, JPLai, PT
2017
 
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:IEEE Transactions on Electron Devices
Cheng, ZXLiu, LXu, JPHuang, YLai, PTTang, WM
2016
 
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric
Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference
Liu, LNChoi, HWXu, JPLai, PT
2016
 
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:IEEE Transactions on Electron Devices
Wen, MXu, JPLiu, LLai, PTTang, WM
2017
 
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Journal:Physica Status Solidi - Rapid Research Letters
LIU, LChoi, HWXu, JPLai, PT
2017
 
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, LNChoi, HWLai, PTXu, JP
2016
 
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, XXu, JPLiu, LLai, PTTang, WM
2019
 
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Yang, BLLin, LMXu, JPLai, PT
2006
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:Applied Physics Letters
Ji, FXu, JPLiu, JGLi, CXLai, PT
2011
 
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:IEEE Transactions on Device and Materials Reliability
Lu, HHXu, JPLiu, LLai, PTTang, WM
2017
 
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:IEEE Transactions on Electron Devices
Lu, HHLiu, LXu, JPLai, PTTang, WM
2017
 
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:Applied Physics Letters
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2016
 
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:Applied Physics Letters
HUANG, YXU, JPLIU, LCHENG, ZXLai, PTTANG, WM
2017
 
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:Applied Physics Letters
Huang, YXu, JPLiu, LLai, PTTang, WM
2016
 
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:Applied Surface Science
Huang, YXu, JPLiu, LCheng, ZXLai, PTTang, WM
2019
 
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:IEEE Electron Device Letters
Zhao, XYXu, JPLiu, LLai, PTTang, WM
2020
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:IEEE Electron Device Letters
Ji, FXu, JPLai, PTLi, CXLiu, JG
2011
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
Lai, PTXu, JPLi, CXChan, CL
2005
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